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    ADVANCED SEMICONDUCTOR DEVICES
    Proceedings of the 2006 Lester Eastman Conference
    Cornell, Ithaca, NY, USA, 26 August 2006

    edited by Michael S Shur (Rensselaer Polytechnic Institute, USA), Paul Maki (Office of Naval Research, USA), & James Kolodzey (University of Delaware, USA)

    Table of Contents (41k)
    Preface (281k)
    Chapter 1: Wide-Bandgap Semiconductor Devices for Automotive Applications (402k)

    This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.

     
    Contents:
    • Wide Band Gap Devices
    • Terahertz and Millimeter Wave Devices
    • Silicon and SiGe Devices
    • Nanoelectronics and Ballistic Devices
    • Photoluminescence and Photocapacitance
     
    Readership: Graduate and undergraduates in nanomaterials and nanostructures; engineers in nanoelectronics.
     
     
    208pp    Pub. date: Jun 2007  
    ISBN:   978-981-270-858-8
    981-270-858-8
       US$128 / £84

     


    208pp    Pub. date: Jun 2007  
    ISBN:   978-981-277-033-2(ebook)
    981-277-033-X(ebook)
       US$166

     


     

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    Updated on 13 February 2012