edited by M F Chang (Rockwell Int. Corp., USA)

Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

• Introduction (P K Tien)
• Foreword (M F Chang)
• III-V Heterojunction Bipolar Transistors for High-Speed Applications (M F Chang & P M Asbeck)
• AlGaAs/GaAs HBTs for Analog and Digital Applications (K-C Wang et al.)
• The Design and Fabrication of High-Speed HBT Circuits for Fiber-Optical Communication Systems (M Obara & J Akagi)
• Ballistic Collection Transistors and Their Applications (T Ishibashi et al.)
• HBTs for Microwave Power Applications (B Bayraktaroglu & A Higgins)
• GaAs HBT Reliability (H Sugahara)
• Recent Developments in GaInP/GaAs Heterojunction Bipolar Transistors (W Liu et al.)
• InP-Based Heterojunction Bipolar Transistors (H-F Chau et al.)
• Noise Characteristics of InP-Based Heterostructure Bipolar Transistors (Y K Chen et al.)
• Silicon: Germanium Heterojunction Bipolar Transistors
• From Experiment to Technology (B S Meyerson et al.)
• Future Directions for HBT Development (P M Asbeck et al.)