edited by R D Schrimpf (Vanderbilt University, USA) & D M Fleetwood (Vanderbilt University, USA)

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal–oxide–semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

• Single Event Effects in Avionics and on the Ground (E Normand)
• Soft Errors in Commercial Integrated Circuits (R C Baumann)
• System Level Single Event Upset Mitigation Strategies (W F Heidergott)
• Space Radiation Effects in Optocouplers (R A Reed et al.)
• The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.)
• Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby)
• Hardness Assurance for Commercial Microelectronics (R L Pease)
• Switching Oxide Traps (T R Oldham)
• Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot)
• and other articles