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SILICON CARBIDE POWER DEVICES
by B Jayant Baliga (North Carolina State University, USA)
Table of Contents (17k)
Preface (26k)
Chapter 1: Introduction (72k)
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Contents:
- Material Properties and Technology
- Breakdown Voltage
- PiN
Rectifiers
- Schottky Rectifiers
- Shielded Schottky Rectifiers
- Metal-Semiconductor Field Effect Transistors
- The Baliga-Pair Configuration
- Planar Power MOSFETs
- Shielded Planar MOSFETs
- Trench-Gate Power MOSFETs
- Shielded Trendch-Gate MOSFETs
- Charge Coupled Structures
- Integral Diodes
- Lateral High Voltage FETs
- Synopsis
Readership: For practising engineers working on power devices, and as a
supplementary textbook for a graduate level course on power devices.
| 528pp |
Pub. date: Jan 2006 |
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