by Carlos Galup-Montoro (Federal University of Santa Catarina, Brazil) & Márcio Cherem Schneider (Federal University of Santa Catarina, Brazil)

Table of Contents (41k)
Preface (44k)
Chapter 1: Introduction (50k)

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.

Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.

Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

• The MOS Capacitor
• The Long-Channel MOSFET: Theory and dc Equations
• The Real MOS Transistor: dc Models
• Stored Charges and Capacitive Coefficients
• Mismatch Modeling
• Noise in MOSFETs
• High-Frequency Models
• Gate and Bulk Currents
• Advanced MOSFET Structures
• MOSFET Parameter Extraction
• Advanced MOSFET Models for Circuit Simulators