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    RELIABILITY AND RADIATION EFFECTS IN COMPOUND SEMICONDUCTORS

    by Allan Johnston (Jet Propulsion Laboratory, California Institute of Technology, USA)

    Table of Contents (47k)
    Preface (43k)
    Chapter 1: Introduction (107k)

    This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.

    It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.

     
    Contents:
    • Semiconductor Fundamentals
    • Transistor Technologies
    • Optoelectronics
    • Reliability Fundamentals
    • Compound Semiconductor Reliability
    • Optoelectronic Device Reliability
    • Radiation Environments
    • Interactions of Radiation with Semiconductors
    • Displacement Damage in Compound Semiconductors
    • Displacement Damage in Optoelectronic Devices
    • Radiation Damage in Optocouplers
    • Effects from Single Particles
     
    Readership: Graduate students and researchers interested in reliability and radiation effects in compound semiconductors in space.
     
     
    376pp    Pub. date: Apr 2010  
    ISBN:   978-981-4277-10-5
    981-4277-10-X
       US$98 / £61

     


    376pp    Pub. date: Apr 2010  
    ISBN:   978-981-4277-11-2(ebook)
    981-4277-11-8(ebook)
       US$127

     


     

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    Updated on 13 February 2012