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COMPOUND SEMICONDUCTOR BULK MATERIALS AND CHARACTERIZATIONS
by Osamu Oda (Aichi Science & Technology Foundation, Japan)
Table of Contents (152k)
Preface (307k)
Chapter 1: Physical Properties (903k)
This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, including important industrial materials and the results of recent research.
Contents:
- Fundamentals:
- Physical Properties
- Crystal Growth
Methods
- Principles of Crystal Growth
- Defects
- Characterization
- Applications
- III–V Materials:
- GaP
- GaAs
- GaSb
- InP
- InAs
- InSb
- II–VI Materials:
- CdS
- CdSe
- CdTe
- ZnS
- ZnSe
- ZnTe
Readership: Materials scientists, applied physicists and engineers working on
compound semiconductor materials and devices.
| 556pp |
Pub. date: Apr 2007 |
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