edited by W K Liu (Quantum Epitaxial Designs, Inc., USA) & M B Santos (University of Oklahoma, USA)

Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-T_c superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II–VI and IV–VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

• Atomic Interactions and Surface Processes in Heteroepitaxy (J A Venables)
• Ordering in III–V Semiconductor Alloys (G B Stringfellow)
• Transition Metal Thin Film Epitaxy (G R Harp)
• The Growth and Structure of Epitaxial Metal-Oxide/Metal Interfaces (C A Ventrice, Jr. & H Geisler)
• Heteroepitaxy of Disparate Materials: From Chemisorption to Epitaxy in CaF₂/Si(111) (M A Olmstead)
• Recent Progress in High T_c Superconducting Heterostructures (J Z Wu & S C Tidrow)
• Strain Accommodation and Relief in GeSi/Si Heteroepitaxy (R Hull & E A Stach)
• Heteroepitaxial Growth Modes and Morphologies on GaAs Surfaces (B A Joyce & D D Vvedensky)
• Molecular Beam Epitaxy of Sb-Based Semiconductors (B R Bennett & B V Shanabrook)
• P-Based Semiconductor Multilayers (M Razeghi)
• MBE Growth of Wide-Gap Refractory Nitride Epitaxial Films (R J Hauenstein)
• Epitaxial Growth, Microstructural Characterizations, and Optical Physics of Wide Bandgap II–VI Heterostructures (J Han et al.)
• Molecular Beam Epitaxy of Narrowgap IV–VI Semiconductors (G Springholz et al.)