edited by D J Dumin (Clemson University, USA)

This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.

• Oxide Wearout, Breakdown, and Reliability (D J Dumin)
• Reliability of Flash Nonvolatile Memories (N Mielke & J Chen)
• Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO₂ Dielectrics (J W McPherson)
• Breakdown Modes and Breakdown Statistics of Ultrathin SiO₂ Gate Oxides (J Suñe et al.)
• MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications (Y-C Yeo et al.)