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Selected Topics in Electronics and Systems - Vol. 23
OXIDE RELIABILITY
A Summary of Silicon Oxide Wearout, Breakdown, and Reliability
edited by D J Dumin (Clemson University, USA)
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Contents:
- Oxide Wearout, Breakdown, and Reliability (D J Dumin)
- Reliability
of Flash Nonvolatile Memories (N Mielke & J Chen)
- Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics (J W McPherson)
- Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides (J Suņe et al.)
- MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications (Y-C Yeo et al.)
Readership: Reliability and manufacturing engineers, as well as researchers
and academics in the areas of semiconductor devices, semiconductor manufacturing and semiconductor device reliability.
| 280pp |
Pub. date: Jan 2002 |
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