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    ADVANCED DEVICE MODELING AND SIMULATION

    by Tibor Grasser (Technical University Vienna, Austria)

    Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

     
    Contents:
    • Modeling Electron Transport in MOSFET Devices: Evolution and State of the Art (A Abramo)
    • Particle Models for Device Simulation (H Kosina & M Nedjalkov)
    • Effective Potentials and Quantum Fluid Models: A Thermodynamic Approach (C Ringhofer et al.)
    • Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrödinger and Boltzmann System of Equations (N Goldsman & C-K Huang)
    • Hydrodynamic Modeling of RF Noise for Silicon-Based Devices (C Jungemann et al.)
    • Carbon Nanotubes as a Perfectly Conducting Cylinder (T Ando)
    • Hot Carrier Effects Within Macroscopic Transport Models (T Grasser et al.)
     
    Readership: Upper level undergraduates, graduate students, academics/lecturers, researchers and industrialists in microelectronics and semiconductor science.
     


     
    216pp    Pub. date: Oct 2003  
    ISBN:   978-981-238-607-6
    981-238-607-6
       US$94 / £75

     


    216pp    Pub. date: Oct 2003  
    ISBN:   978-981-270-528-0(ebook)
    981-270-528-7(ebook)
       US$125 / £74

     


     

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    Updated on 20 November 2009