edited by M S Shur (Rensselaer Polytechnic Institute, USA) & R F Davis (North Carolina State University, USA)

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.

This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

• Materials:Materials Properties of Nitrides. Summary (S L Rumyantsev et al.)
  • Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy (A M Roskowski et al.)
  • Cracking of GaN Films (E V Etzkorn & D R Clarke)
• Transport and Noise Properties:
  • Quasi-Ballistic and Overshoot Transport in Group III-Nitrides (K W Kim et al.)
  • High Field Transport in AIN (R Collazo et al.)
  • Generation-Recombination Noise in GaN-Based Devices (S L Rumyantsev et al.)

• Devices:
  • Insulated Gate III-N Heterostructure Field-Effect Transistors (G Simin et al.)
  • High Voltage AlGaN/GaN Heterojunction Transistors (L S McCarthy et al.)
  • Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching (Y Gao et al.)
  • and other papers