edited by Robert E Leoni III (Raytheon RF Components, USA)

This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.

• Tunnel Diode/Transistor Differential Comparator (Q Liu et al.)
• Native Defect Compensation in III-Antimonide Bulk Substrates (R Pino et al.)
• Electrical Effects of DNA Molecules on Silicon Field Effect Transistor (G Xuan et al.)
• Noise Characteristics of 340 nm and 280 nm GaN-Based Light Emitting Diodes (S Sawyer et al.)
• Self-Guiding in Low-Index-Contrast Planar Photonic Crystals (C Chen et al.)
• Omni-Directional Reflector Using a Low Refractive Index Material (J-Q Xi et al.)
• Stable High Power GaN-on-GaN HEMT (K K Chu et al.)
• Thick GaN Layer Grown by Ga Vapor Transport Technique (H Wu et al.)
• Noise Characteristics of Field-Plated GaN HEMTs (Y-F Wu et al.)
• Simulation Study on Breakdown Behavior of Field-Plate SiC MESFETs (H-Y Cha et al.)
• and other papers