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THEORY OF SEMICONDUCTOR QUANTUM DOTS
Band Structure, Optical Properties and Applications
edited by Aleksey Andreev (University of Surrey, UK)
Semiconductor structures containing zero-dimensional objects — quantum dots — are the subject of intensive research worldwide. This monograph describes a detailed theory of the electronic band structure and optical properties of semiconductor quantum dots.
The author provides a comprehensive description of an original approach based on a combination of the Fourier transform, the Green’s function and plane-wave expansion techniques in the framework of multiband 8x8 kp theory. The calculated band structure, optical properties and device applications are analyzed in line with available experiments for a large number of realistic quantum dot structures and various combinations of materials, such as InGaN, GaN/AlN, ZnSe, InGaAs (including dots-in-the-well), ZnSe/CdSe, and lead salts.
Contents:
- Strain in QD Structures
- Built-In Electric Fields in QD Structures
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Band Structure of QDs
- Plane Wave Expansion Method for the QD Band Structure Calculations
- Optical Properties
- InAs/GaAs Based QDs
- InGaN/GaN Based QDs
- GaN/AIN Based QDs
- PbSe, PbS and PbTe QDs
- QDs Based on Other Materials
- QD Lasers
- Other Optoelectronic Applications
- QDs and Quantum Information Processing
Readership: Researchers in the area of semiconductor dots and nanocrystals,
including fundamental research and applications, experiment and theory, and students and researchers in physics and electrical engineering, including biological and medical application areas. Some chapters are suitable for postgraduate courses.
| 400pp (approx.) |
Pub. date: Scheduled Winter 2008 |
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