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NANOMETER CMOS
by Frank Schwierz (Technical University Ilmenau, Germany), Hei Wong (City University of Hong Kong, Hong Kong) & Juin J Liou (University of Central Florida, USA)
This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.
An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.
Contents:
- Evolution and Recent Advances in Si Electronics
- MOSFET
Fundamentals, Theory, and Modeling
- Nanometer MOSFETs
- RF MOSFETs
- Overview of Nanometer CMOS Technology
- Challenges of Giga-Scale Integration
Readership: Graduates and postgraduate students, researchers, engineers and
managers in the fields of electrical & electronic engineering and nanoelectronics & microelectronics.
| 300pp (approx.) |
Pub. date: Scheduled Winter 2008 |
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