by Frank Schwierz (Technical University Ilmenau, Germany), Hei Wong (City University of Hong Kong, Hong Kong), & Juin J Liou (University of Central Florida, USA)

This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.

An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.

Published by Pan Stanford Publishing and distributed exclusively by World Scientific in Asia Pacific, except for India and Japan.

• The Evolution of Silicon Electronics
• MOSFET Theory
• Nanoscale MOSFETs
• MOSFETs for RF Applications
• Overview of Nanometer CMOS Technology
• Outlook