|
|
|
Advances in Disordered Semiconductors - Vol. 1
AMORPHOUS SILICON AND RELATED MATERIALS
(In 2 Parts)
edited by H Fritzsche (Univ. Chicago)
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
Contents:
- Structural Aspects: Structural Heterogeneities
in Device-Quality Amorphous Hydrogenated Semiconductors (J A Reimer & M A Petrich)
- Local Structure of Dopants in Hydrogenated Amorphous Silicon (J B Boyce & S E Ready)
- Plasma Deposition of Amorphous and Crystalline Silicon: The Effect of Hydrogen on the Growth, Structure Electronic Properties (C C Tsai)
- Defects and Defect Dynamics: Thermal Equilibrium Effects in Doped Hydro-genated Amorphous Silicon (J Kakalios & R A Street)
- Kinetics of Carrier-Induced Metastable Defect Formation in Hydrogen Amorphous Silicon (W B Jackson & J Kakalios)
- Transient Photocapacitance Studies of Deep Defect Transitions in Hydrogenated Amorphous Silicon (J D Cohen & A V Gelatos)
- The Microscopic Structure of Defects in a-Si:H and Related Materials (M Stutzmann & D K Biegelsen)
- Electronic Transport, Trapping and Recombination: Transport and Tail State Interactions in Amorphous Silicon (W E Spear)
- Recombination in a-Si:H - Temperature and Field Quenching of the Photoluminescence (W Fuhs & K Jahn)
- Photo-luminescence in a-Si:H Films and Multilayers (W-C Wang & H Fritzsche)
- Amorphous Si-Ge Alloys: Optoelectronic Properties and the Gap State Distribution in a-Si, Ge Alloys (S Aljishi et al.)
- Multilayers and Interfaces: Differential Absorption Spectroscopy on Amorphous Silicon Quantum Well Structures (K Hattori et al.)
- Growth and Structure of Interfaces in a-Si:H/a-SiOx and a-Si:H/a-SiNx:H Multilayers and Heterojunctions (L Yang & B Abeles)
- and others
Readership: Solid state physicists and electrical engineers.
| 1152pp |
Pub. date: Jan 1989 |
|
|