by S J Pearton (University of Florida) , C R Abernathy (University of Florida) , & F Ren (Lucent Technologies, Bell Laboratories)

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

• Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)
• Growth of Heterojunction Bipolar Transistors from Molecular Beams
• Heteroepitaxy
• Implant Doping and Isolation
• Rapid Thermal Annealing
• Wet and Dry Etching of III-V Semiconductors
• Hydrogen in Crystalline Semiconductors: III-V Compounds
• Heterojunction Bipolar Transistors: Processing and Devices
• Novel Heterostructure Field Effect Transistors