This book is an introduction to the principles of semiconductor physics, linking its scientific aspects with practical applications. It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those who want to do both.

Intended as a teaching vehicle, the book is written in an expository manner aimed at conveying a deep and coherent understanding of the field. It provides clear and complete derivations of the basic concepts of modern semiconductor physics. The mathematical arguments and physical interpretations are well balanced: they are presented in a measure designed to ensure the integrity of the delivery of the subject matter in a fully comprehensible form. Experimental procedures and measured data are included as well. The reader is generally not expected to have background in quantum mechanics and solid state physics beyond the most elementary level. Nonetheless, the presentation of this book is planned to bring the student to the point of research/design capability as a scientist or engineer. Moreover, it is sufficiently well endowed with detailed knowledge of the field, including recent developments bearing on submicron semiconductor structures, that the book also constitutes a valuable reference resource.

In Chapter 1, basic features of the atomic structures, chemical nature and the macroscopic properties of semiconductors are discussed. The band structure of ideal semiconductor crystals is treated in Chapter 2, together with the underlying one-electron picture and other fundamental concepts. Chapter 2 also provides the requisite background of the tight binding method and the k.p-method, which are later used extensively. The electron states of shallow and deep centers, of clean semiconductor surfaces, quantum wells and superlattices, as well as the effects of external electric and magnetic fields, are treated in Chapter 3. The one- or multi-band effective mass theory is used wherever this method is applicable. A summary of group theory for application in semiconductor physics is given in an Appendix. Chapter 4 deals with the statistical distribution of charge carriers over the band and localized states in thermodynamic equilibrium. Non-equilibrium processes in semiconductors are treated in Chapter 5. The physics of semiconductor junctions (pn-, hetero-, metal-, and insulator-) is developed in Chapter 6 under conditions of thermodynamic equilibrium, and in Chapter 7 under non-equilibrium conditions. On this basis, the most important electronic and opto-electronic semiconductor devices are treated, including uni- and bi-polar transistors, photodetectors, solar cells, and injection lasers. A summary of group theory for applications in semiconductors is given in an Appendix.

Readership: Undergraduates, graduates and researchers in the fields of physics and engineering.

"... The reader who has only a first acquaintance with semiconductor physics will find that this book has fully detailed explanations of the fundamental physical phenomena, providing a good general background ... A brilliant discussion of artifical atomic superstructures of nanometer length scale establishes a link to the most active field of semiconductor physics ... In my opinion the book of R Enderlein and N J M Horing Fundamentals of Semiconductor Physics and Devices is a valuable contribution to the modern didactic literature on the physics of semiconductors. Morever, it is of considerable value as a reference for specialists as well."

"... This is a valuable book to have, covering a wide range of subjects, fundamental to an understanding of semiconductor physics. For engineering students, particularly those trained to do advanced work on semiconductors, it is very helpful to have one book which deals with the essential understanding ... The chapters on defects and deep levels is very good, something one cannot find in other semiconductor textbooks."

"In Fundamentals of Semiconductor Physics and Devices, R Enderiein and N J M Horing have provided a very extensive and detailed text on the physics underlying semiconductor devices. More so than any other current text, this book provides a greatly expanded discussion of modern tight-binding methods, helping the students to understand these aspects of electronic structure in clear, simple terms. In connection with this the authors offer a very detailed discussion of deep levels in semiconductors, which are so important to semiconducting properties. Also, in the discussion of transport properties, the book goes into much greater depth about nonlinear and nonequilibrium processes than is usual. It is quite a unique contribution, containing the basic physics which tends to be missing from device-oriented books, but going much further into the essentials needed for device development than any solid-state-physics text."