by Rolf Enderlein (Humboldt-University Berlin & University of Sao Paulo) & Norman J Horing (Stevens Institute of Technology)

Preface (298k)
Table of Contents (409k)
Chapter 1: Characterization of semiconductors
Chapter 1.1: Introduction (565k)
Chapter 1.2: Atomic Structure of Ideal Crystals (1,620k)

Rolf Enderlein is a leading expert in semiconductor physics. He received his doctorates in theoretical physics and solid state physics from the Humboldt-University of Berlin, Germany, where he returned as a Professor and remained as longstanding leader of the semiconductor theory section of the Physics Department. He is internationally known for his numerous research publications review articles and books, and has been an invited speaker at many international conferences. His research activities cover various branches of semiconductor physics, among them optical properties, modulation spectroscopy, Raman scattering surfaces and interfaces, and, more recently, artificial semiconductor microstructures like quantum wells and superlattices. At present, he works as a guest Professor at the Physics Institute of the University of São Paulo, Brazil
 

Normas J M Horing is a Professor of Physics and Engineering Physics at Stevens Institute of Technology, Hoboken, New Jersey, USA. He received his PhD degrees at Harvard University, working with Professor Julian Schwinger. His positions as research physicist include the MIT National Magnet Laboratory and Lincoln Laboratory, US Naval Research Laboratory and the Cavendish Laboratory of the University of Cambridge, UK, as well as the Stevens Institute of Technology. He is well known internationally for his research on theoretical condensed matter physics, in particular the quantum theory of solid state plasmas, high magnetic field effects and transport properties. As leader of semiconductor theory research at Stevens' Quantum Electron Physics and Technology Center, he has published widely on the properties of submicronnanostructures as well as bulk semiconductors.
 

This book is an introduction to the principles of semiconductor physics, linking its scientific aspects with practical applications. It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those who want to do both.

Intended as a teaching vehicle, the book is written in an expository manner aimed at conveying a deep and coherent understanding of the field. It provides clear and complete derivations of the basic concepts of modern semiconductor physics. The mathematical arguments and physical interpretations are well balanced: they are presented in a measure designed to ensure the integrity of the delivery of the subject matter in a fully comprehensible form. Experimental procedures and measured data are included as well. The reader is generally not expected to have background in quantum mechanics and solid state physics beyond the most elementary level. Nonetheless, the presentation of this book is planned to bring the student to the point of research/design capability as a scientist or engineer. Moreover, it is sufficiently well endowed with detailed knowledge of the field, including recent developments bearing on submicron semiconductor structures, that the book also constitutes a valuable reference resource.

In Chapter 1, basic features of the atomic structures, chemical nature and the macroscopic properties of semiconductors are discussed. The band structure of ideal semiconductor crystals is treated in Chapter 2, together with the underlying one-electron picture and other fundamental concepts. Chapter 2 also provides the requisite background of the tight binding method and the k.p-method, which are later used extensively. The electron states of shallow and deep centers, clean semiconductor surfaces, quantum wells and superlattices, as well as the effects of external electric and magnetic fields, are treated in Chapter 3. The one- or multi-band effective mass theory is used wherever this method is applicable. A summary of group theory for application in semiconductor physics is given in an Appendix. Chapter 4 deals with the statistical distribution of charge carriers over the band and localized states in thermodynamic equilibrium. Non-equilibrium processes in semiconductors are treated in Chapter 5. The physics of semiconductor junctions (pn-, hetero-, metal-, and insulator-) is developed in Chapter 6 under conditions of thermodynamic equilibrium, and in Chapter 7 under non-equilibrium conditions. On this basis, the most important electronic and opto-electronic semiconductor devices are treated, among them uni- and bi-polar transistors, photodetectors, solar cells, and injection lasers. A summary of group theory for applications in semiconductors is given in an Appendix.