edited by Keh-Chung Wang (Rockwell Semiconductor Systems, USA)

About K C Wang

High speed circuits are crucial for increasing the bandwidth of transmission and switching of voice/video/data over optical fiber networks. The ever-increasing demand for bit rates higher than those available due to the explosion of Internet traffic has driven engineers to develop integrated circuits of performance approaching 100 Gb/s. Commercial lightwave products using high speed circuits of 10 Gb/s and beyond are readily available.

High Speed Circuits for Lightwave Communications presents the latest information on circuit design, measured results, applications, and product development. It covers electronic and opto-electronic circuits for transmission, receiving, and cross-point switching. These circuits were implemented with various state-of-the-art IC technologies, including Si BJT, GaAs MESFET, HEMT, HBT, as well as InP HEMT and HBT. The book, written by more than 50 experts, will benefit graduate students, researchers, and engineers who are interested in or work in this exciting and challenging field of optical communications.

• High Speed Circuits for Lightwave Communications (K Pedrotti)
• Si and SiGe Bipolar ICs for 10 to 40 Gb/s Optical-Fiber TDM Links (H-M Rein)
• Low Transimpedance-Fluctuation Design for 10-GHz Si-Bipolar Preamplifier in 10 Gb/s Optical Transmission Systems (T Masuda et al.)
• 20–40-Gbit/s-Class GaAs MESFET Digital ICs for Future Optical Fiber Communications Systems (T Otsuji et al.)
• 20–40 Gbit/s GaAs-HEMT Chip Set for Optical Data Receiver (Z Lao et al.)
• AlGaAs/GaAs HBT Circuits for Optical TDM Communications (K Runge et al.)
• High Speed Cross-Point Switches (C E Chang et al.)
• HBT ICs for OC-192 Equipment (J Sitch & R Surridge)
• Present Status and Future Prospects of High-Speed Lightwave IC's Based on InP (E Sano et al.)
• InP HBT ICs for 40 Gb/s Optical Links (M Mokhtari et al.)
• A Review of Recent Progress in InP-Based Optoelectronic Integrated Circuit Receiver Front-Ends (R H Walden)
• Ultrahigh f_max AlInAs/GaInAs Transferred-Substrate Heterojunction Bipolar Transistors for Integrated Circuits Applications (B Agarwal et al.)