|
|
|
TERRESTRIAL NEUTRON-INDUCED SOFT ERRORS IN ADVANCED MEMORY DEVICES
by Takashi Nakamura, Mamoru Baba (Tohoku University, Japan), Eishi Ibe, Yasuo Yahagi (Hitachi Ltd., Japan) & Hideaki Kameyama (Renesas Technology Corporation, Japan)
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.
This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.
Contents:
- Terrestrial Neutron Spectrometry and Dosimetry
- Irradiation Testing
in the Terrestrial Field
- Neutron Irradiation Test Facilities
- Review and Discussion of Experimental Data
- Monte Carlo Simulation Methods
- Simulation Results and Their Implications
- International Standardization of the Neutron Test Method
- Summary and Challenges
Readership: Students and researchers in the field of radiation effects/nuclear
and accelerator physics/cosmic ray physics, engineers involved in reliability design/quality assurance of semiconductor devices and IT systems.
| 368pp |
Pub. date: Apr 2008 |
|
|
