International Series on Advances in Solid State Electronics and Technology
(ISSN: 1793-3382)
Founding Editor: Chih-Tang Sah (Univ. Florida)
This series was established to rapidly publish research monographs,
edited volumes, advanced textbooks, handbooks and authoritative
reviews concerning the latest develpments in the theory and practice
in solid-state microelectronics. This series will include material
physics, device physics and engineering and circuits for
microelectronic applications. It will include transistors used in
present and future generations of submicron integrated circuits and
also solid-state materials and devices that emit and detect light,
solid-state sensor, materials and devices that sense pressure,
temperature, chemical vapour and liquid.
To contribute to this book series, contact editor@worldscientific.com
Published titles
Ionizing Radiation Effects in MOS Oxides
by T R Oldham
Modern Semiconductor Quantum Physics
by M-F Li
MOSFET Modeling for Circuit Analysis and Design
by C Galup-Montoro & M Cherem Schneider
MOSFET Modeling for VLSI Simulation
Theory and Practice
by N Arora
Topics in Growth and Device Processing of III-V Semiconductors
by S J Pearton, C R Abernathy & F Ren
Forthcoming titles
BSIM4: Theory and Engineering of MOSFET Modeling for IC Simulation
by Weidong Liu & Chenming Hu
Invention of Integrated Circuits
Untold Important Facts
by Arjun N Saxena
Physics and Modeling of MOSFETS, The
by M Miura-Mattausch, H J Mattausch & T Ezaki
